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Mosfet - Single Discrete Semiconductor Product 67A 100V 125W Infineon Technologies Surface Mount IPD12CN10N G

MOSFET N-CH 100V 67A TO252-3 - IPD12CN10N G

Digi-Key Part Number IPD12CN10N G-ND
Price Break
2500
Unit Price
.91000
Extended Price
2275.00
Manufacturer Part NumberIPD12CN10N G
DescriptionMOSFET N-CH 100V 67A TO252-3
Quantity Available Non-Stock
All prices are in USD

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Specifications for Mosfet - Single Discrete Semiconductor Product 67A 100V 125W Infineon Technologies Surface Mount IPD12CN10N G
Technical/Catalog InformationIPD12CN10N G
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET TypeMOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C67A
Rds On (Max) @ Id, Vgs12.4 mOhm @ 67A, 10V
Input Capacitance (Ciss) @ Vds 4320pF @ 50V
Power - Max125W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseDPak, TO-252 (2 leads+tab), SC-63
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPD12CN10N G
IPD12CN10N G


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MOSFET N-CH 100V 67A TO252-3 - IPD12CN10N G (IPD12CN10N G-ND)

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MOSFET N-CH 100V 67A TO252-3 - IPD12CN10N G
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