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MOSFET N-CHAN 60V 80A TO-263 - IPB080N06N G - Discrete Semiconductor Products

Digi-Key Part Number IPB080N06NGINDKR-ND
Price Break
1
10
100
1000
Unit Price
2.92000
2.29800
1.94960
1.21853
Extended Price
2.92
22.98
194.96
1218.53
Manufacturer Part NumberIPB080N06N G
DescriptionMOSFET N-CHAN 60V 80A TO-263
Quantity Available Available
All prices are in USD

QuantityItem NumberCustomer Reference

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Technical/Catalog InformationIPB080N06N G
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs @ 25° C7.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3500pF @ 30V
Power - Max250W
PackagingDigi-Reel®
Gate Charge (Qg) @ Vgs93nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB080N06N G
IPB080N06N G
IPB080N06NGINDKR ND
IPB080N06NGINDKRND
IPB080N06NGINDKR

IPB080N06N G Specification Sheet

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MOSFET N-CHAN 60V 80A TO-263 - IPB080N06N G (IPB080N06NGINDKR-ND) - Discrete Semiconductor Products

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