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Mosfet - Single Discrete Semiconductor Product 8A 500V 40W Toshiba Through Hole 2SK3561(Q,M)

MOSFET N-CH 500V 8A TO-220SIS - 2SK3561(Q,M)

Digi-Key Part Number 2SK3561QM-ND
Price Break
1
10
100
250
500
1000
2500
5000
Unit Price
1.53000
1.22000
.91500
.85400
.82350
.79300
.78080
.76250
Extended Price
1.53
12.20
91.50
213.50
411.75
793.00
1952.00
3812.50
Manufacturer Part Number2SK3561(Q,M)
DescriptionMOSFET N-CH 500V 8A TO-220SIS
Quantity Available 44
All prices are in USD

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Specifications for Mosfet - Single Discrete Semiconductor Product 8A 500V 40W Toshiba Through Hole 2SK3561(Q,M)
Technical/Catalog Information2SK3561(Q,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs850 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / Case2-10U1B
FET FeatureStandard
Drawing Number*
Mfr Reel Diameter*
Mfr Reel Tape Material*
Mfr Reel Tape Width*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK3561 Q,M
2SK3561Q,M
2SK3561QM ND
2SK3561QMND
2SK3561QM

2SK3561(Q,M) Specification Sheet

Image of MOSFET N-CH 500V 8A TO-220SIS - 2SK3561(Q,M)

MOSFET N-CH 500V 8A TO-220SIS - 2SK3561(Q,M) (2SK3561QM-ND)

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